Deep energy levels in CdTe and CdZnTe

• DOI: 10.1063/1.366946
• Publication Date: 2002-07-26T13:33:46Z
• Authors: A. Castaldini; A. Cavallini; B. Fraboni; P. Fernandez; J. Piqueras
• Keywords: Cathodoluminescence; Deep-level transient spectroscopy; Cadmium telluride photovoltaics

The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, level transient spectroscopy (DLTS), photo-induced current spectroscopy, photo-DLTS. latter two methods, which can be applied to materials, allow characterize the traps located up midgap determine whether they are hole or electron traps. We identified 12 different traps, some common all samples, peculiar one them. A comparison results obtained from various materials is given status defect models reviewed.