Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique

• DOI: 10.1063/1.3678020
• Publication Date: 2012-01-24T23:43:05Z
• Authors: Suk-Kyu Ryu; Tengfei Jiang; Kuan H. Lu; Jay Im; Ho-Young Son; Kwang-Yoo Byun; Rui Huang; Paul S. Ho
• Keywords: Temperature cycling; Stress relaxation; Through-Silicon Via

Through-silicon via is a critical element for three-dimensional (3D) integration of devices in multilevel stack structures. Thermally induced stresses through-silicon vias (TSVs) have raised serious concerns over mechanical and electrical reliability 3D technology. An experimental technique presented to characterize thermal TSVs during cycling based on curvature measurements bending beam specimens. Focused ion electron backscattering diffraction analyses reveal significant grain growth copper vias, which correlated with stress relaxation the first cycle. Finite analysis performed determine distribution effect localized plasticity account TSV extrusion observed annealing.