Measurement of porous silicon thermal conductivity by micro-Raman scattering

• DOI: 10.1063/1.371424
• Publication Date: 2002-07-26T13:55:45Z
• Authors: S. Périchon; V. Lysenko; B. Remaki; D. Barbier; B. Champagnon
• Keywords: 02 engineering and technology; 0210 nano-technology

We present a noncontact and nondestructive method to measure thermal conductivity in layered materials using micro-Raman scattering. This method was successfully applied to monocrystalline silicon whose thermal conductivity was found to be 63 W/m K at about 550 °C and then applied to porous silicon layers. For a 50 μm thick layer with 50% porosity, we found a thermal conductivity of 1 W/m K confirming the thermal insulating properties of this material.