Creation of a two-dimensional electron gas and conductivity switching of nanowires at the LaAlO3/SrTiO3 interface grown by 90o off-axis sputtering

• DOI: 10.1063/1.4817921
• Publication Date: 2013-08-12T22:20:26Z
• Authors: J. P. Podkaminer; T. Hernandez; M. Huang; S. Ryu; C. W. Bark; S. H. Baek; J. C. Frederick; T. H. Kim; K. H. Cho; J. Levy; M. S. Rzchowski; C. B. Eom
• Keywords: 0301 basic medicine; 03 medical and health sciences

Two-dimensional electron gas (2DEG) formed at the interface between two oxide band-insulators LaAlO3 and SrTiO3 raises the possibility to develop oxide nanoelectronics. Here, we report the creation of a 2DEG at the LaAlO3/SrTiO3 heterointerfaces grown by 90° off-axis sputtering which allows uniform films over a large area. The electrical transport properties of the LaAlO3/SrTiO3 heterointerface are similar to those grown by pulsed laser deposition. We also demonstrate room-temperature conductive probe-based switching of quasi-one-dimensional structures. This work demonstrates that a scalable growth process can be used to create the two-dimensional electron gas system at oxide heterointerfaces.