Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors

• DOI: 10.1063/1.4890524
• Publication Date: 2014-07-17T12:11:29Z
• Authors: D. Y. Guo; Z. P. Wu; Y. H. An; X. C. Guo; X. L. Chu; C. L. Sun; L. H. Li; P. G. Li; W. H. Tang
• Keywords: Ohmic contact; Ultraviolet

β-Ga2O3 epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed order to reduce the vacancy. Metal/semiconductor/metal structured photodetectors fabricated as-grown film separately. Au/Ti electrodes Ohmic contact with Schottky films. In compare Ohmic-type photodetector, Schottky-type photodetector takes on lower dark current, higher photoresponse, shorter switching time, which benefit from barrier controlling electron transport quantity of photogenerated carriers trapped by vacancy significant decreasing.