Critical boron-doping levels for generation of dislocations in synthetic diamond

• DOI: 10.1063/1.4900741
• Publication Date: 2014-10-29T00:30:43Z
• Authors: M. P. Alegre; D. Araújo; A. Fiori; J. C. Pinero; F. Lloret; M. P. Villar; P. Achatz; G. Chicot; E. Bustarret; F. Jomard
• Keywords: Strain (injury)

Defects induced by boron doping in diamond layers were studied transmission electron microscopy. The existence of a critical level above which defects are generated is reported. This found to be dependent on the CH4/H2 molar ratios and growth directions. concentration lied 6.5–17.0 × 1020at/cm3 range ⟨111⟩ direction at 3.2 1021 at/cm3 for ⟨001⟩ one. Strain related effects shown not responsible. From location dislocations their Burger vectors, model proposed, together with generation mechanism.