Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

• DOI: 10.1063/1.4904993
• Publication Date: 2014-12-22T18:08:04Z
• Authors: Xin-Hao Zhao; Michael J. DiNezza; Shi Liu; Calli M. Campbell; Yuan Zhao; Yong-Hang Zhang
• Keywords: 02 engineering and technology; 0210 nano-technology

The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg0.24Cd0.76Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 102 cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.