Low-frequency noise in MoSe2 field effect transistors

• DOI: 10.1063/1.4913714
• Publication Date: 2015-02-25T18:00:20Z
• Authors: Suprem R. Das; Jiseok Kwon; Abhijith Prakash; Collin J. Delker; Saptarshi Das; David B. Janes
• Keywords: 02 engineering and technology; 0210 nano-technology

One of the important performance metrics emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is magnitude low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX2 (X ≡ S, Se) have shown promising transistor characteristics ION/IOFF ratio exceeding 106 and IOFF, making them attractive for next generation devices. However, MoS2 FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders smaller values Hooge parameter in a back-gated MoSe2 FET (10 atomic layers) with nickel S/D contacts measured atmospheric pressure temperature. The dominated regime was extracted from total spectrum follow mobility fluctuation model 1/f dependence. comparable other 1D devices carbon nanotube (CNT-FETs) paves way use future applications precision sensing communications.