Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

• DOI: 10.1063/1.4916525
• Publication Date: 2015-04-02T17:56:24Z
• Authors: Robert L. Z. Hoye; David Muñoz-Rojas; Shelby F. Nelson; Andrea Illiberi; Paul Poodt; Fred Roozeboom; Judith L. MacManu...
• Keywords: Deposition

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly reactors used, film properties, and dopants that have been studied. We highlight how these films are advantageous performance solar cells, organometal halide perovskite light emitting diodes, thin-film transistors. Future technology will enable commercial processing over large areas a sheet-to-sheet roll-to-roll basis, with new reactor designs emerging flexible plastic paper electronics.