Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films

• DOI: 10.1063/1.4916817
• Publication Date: 2015-04-03T19:57:10Z
• Authors: Tariq F. Alhuwaymel; Robert Carpenter; Chris Nga Tung Yu; Balati Kuerbanjiang; Ranjdar M. Abdullah; Vlado K. Lazarov; Mohamed El-Gomati; Atsufumi Hirohata
• Keywords: Wide-bandgap semiconductor

In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. for the as was found be ∼110 meV when measured at room temperature. This simple provides macroscopic analysis of half-metallic properties thin film. allows optimisation growth and annealing conditions.