Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

• DOI: 10.1063/1.4916984
• Publication Date: 2015-04-13T13:57:56Z
• Authors: Mattias Borg; Heinz Schmid; Kirsten E. Moselund; Davide Cutaia; Heike Riel
• Keywords: Template; Crystal (programming language); Surface diffusion; Facet (psychology); Morphology

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective is presented. The variation in axial growth rate nanowires inside oxide nanotube templates studied as function diameter (20–140 nm), time (0–30 min), temperature (520–580 °C), V/III ratio (40–160), spacing (300–2000 and substrate crystal orientation. It found that the effective reduced at least by a factor two within compared to outside, detectable changes facet morphology. originates from different transport mechanisms for As In precursor species; species are both transported Knudsen diffusion vapor, but an additional contribution surface reduces ratio. results reveal interplay parameters, facets template geometry thus generally applicable nanoscale epitaxy.