Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

• DOI: 10.1063/1.4922448
• Publication Date: 2015-06-16T17:38:25Z
• Authors: Dinh Loc Duong; Si Young Lee; Seong Kyu Kim; Young Hee Lee
• Keywords: Bilayer graphene

We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) hydrofluorinated graphene, were used the concept density functional calculations, revealing Fermi level shift of 0.35 0.75 eV, respectively. This was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene)(P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close our simulation model. G-band peak position downshifted for electron upshifted hole doping. opens opportunity study bilayer system controllable thickness wide range high carrier concentration.