Thermal transport through GaN–SiC interfaces from 300 to 600 K

• DOI: 10.1063/1.4930104
• Publication Date: 2015-09-03T17:01:23Z
• Authors: Elbara Ziade; Jia Yang; Gordie Brummer; Denis Nothern; Theodore Moustakas; Aaron J. Schmidt
• Keywords: Interfacial thermal resistance; Wide-bandgap semiconductor

Silicon carbide is used as a substrate for high-power GaN devices because of its closely matched lattice spacing with and high thermal conductivity. In these devices, resistance at the GaN–SiC interface bottleneck to heat flow, making this property an important factor in device design. letter, we report first measurements boundary conductance epitaxial grown directly on SiC without transition layer. We find that increases from approximately 230 MW/m2K 300 K 330 600 K. Our measured values are good qualitative agreement diffuse mismatch model quantitative when include correction based ratio Debye temperatures two materials. also conductivity film, 4H-SiC, between Ni GaN.