Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

• DOI: 10.1063/1.4930199
• Publication Date: 2015-09-01T17:00:26Z
• Authors: Arjun Shetty; Basanta Roul; Shruti Mukundan; Lokesh Mohan; Greeshma Chandan; K. J. Vinoy; S. B. Krupanidhi
• Keywords: Atmospheric temperature range; Wide-bandgap semiconductor

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer HfO2 (5 nm) between metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) showed increase rectification ratio from 35.9 to 98.9(@ 2V), barrier height (0.52 eV 0.63eV) reduction ideality factor (2.1 1.3) as compared MS Schottky. Epitaxial n-type GaN films thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). crystalline optical qualities confirmed high resolution X-ray diffraction photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) (Pt/HfO2/n-GaN) diodes fabricated. To gain further understanding Pt/HfO2/GaN interface, I-V characterisation was carried out on MIS over temperature range 150 K 370 K. found (0.3 0.79 eV) decreased (3.6 1.2) with dependence attributed inhomogeneous nature contact explanation validated fitting experimental data into Gaussian distribution heights.