Angle dependent interlayer magnetoresistance in multilayer graphene stacks

• DOI: 10.1063/1.4934642
• Publication Date: 2015-10-28T18:42:46Z
• Authors: S. C. Bodepudi; Xiao Wang; S. Pramanik
• Keywords: Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); 0103 physical sciences; FOS: Physical sciences; 01 natural sciences

Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition. This effect has been characterized as a function of temperature and tilt angle of the magnetic field with respect to the interlayer current. To our knowledge, this is the first experimental report on angle dependent ILMR effect in graphitic systems. Our data agree qualitatively with the existing theories of ILMR in multilayer massless Dirac Fermion systems. However, a sharper change in ILMR has been observed as the tilt angle of the magnetic field is varied. A physical explanation of this effect is proposed, which is consistent with our experimental scenario.