Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

• DOI: 10.1063/1.4935602
• Publication Date: 2015-11-12T18:00:24Z
• Authors: Congxin Xia; Bin Xue; Tianxing Wang; Yuting Peng; Yu Jia
• Keywords: 02 engineering and technology; 0210 nano-technology

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.