Self-organized titanium oxide nano-channels for resistive memory application

• DOI: 10.1063/1.4936961
• Publication Date: 2015-12-09T14:31:01Z
• Authors: A. Barman; C. P. Saini; P. Sarkar; B. Satpati; S. R. Bhattacharyya; D. Kabiraj; D. Kanjilal; S. Dhar; A. Kanjilal
• Keywords: Titanium oxide

Towards developing next generation scalable TiO2-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar+-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence 5 × 1016 ions/cm2 ambient temperature is presented. Although x-ray diffraction results suggest amorphization as-grown TiO2 layers, detailed transmission electron microscopy study reveals fluence-dependent evolution voids and eventual formation nano-channels between them. Moreover, gradual increase TiO/Ti2O3 in near surface region, as monitored by photoelectron spectroscopy, establishes upsurge oxygen deficient centers. The impact structural chemical modification on local RS behavior has also been investigated current-voltage measurements conductive atomic force microscopy, while application manifested fabricating Pt/TiO2/Pt/Ti/SiO2/Si devices. Finally, underlying mechanism our experimental analyzed discussed light vacancy migration through nano-channels.