Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation

• DOI: 10.1063/1.4945594
• Publication Date: 2016-04-01T17:00:53Z
• Authors: Yi Zhang; Murad J. Y. Tayebjee; Suntrana Smyth; Miroslav Dvořák; Xiaoming Wen; Hongze Xia; Martin Heilmann; Yuanxun Liao; Zewen Zhang; Todd Williamson; Joshua Williams; Stephen Bremner; Santosh Shrestha; Shujuan Huang; Timothy W. Schmidt; Gavin J. Conibeer
• Keywords: Cathodoluminescence; Photoexcitation; Carrier lifetime; Thermalisation; Charge-carrier density

We have investigated the ultrafast carrier dynamics in a 1 μm bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe existence of indium-rich domains sample. These give rise second population bi-exponential cooling is observed with characteristic lifetimes 1.6 14 ps at density 1.3 × 1016 cm−3. A combination band-filling, screening, hot-phonon effects gives two-fold enhanced mono-exponential rate 28 8.4 1018 This longest thermalization time InGaN alloys date.