Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

• DOI: 10.1063/1.4966999
• Publication Date: 2016-11-09T01:30:17Z
• Authors: Man Hoi Wong; Yoji Morikawa; Kohei Sasaki; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki
• Keywords: Characterization

The channel temperature (Tch) and thermal resistance (Rth) of Ga2O3 metal-oxide-semiconductor field-effect transistors were investigated through electrical measurements complemented by electrothermal device simulations that incorporated experimental parameters. analysis technique was based on a comparison between DC pulsed drain currents (IDS) at known applied biases, where negligible self-heating under conditions enabled approximation Tch to the ambient (Tamb) hence correlation IDS Tch. Validation model achieved calibration against data. in good agreement with for Tamb 20 °C 175 °C. A large Rth 48 mm·K/W thus extracted room highlights value understanding degradation mechanisms improving reliability power devices.