Intrinsic electron mobility limits in β-Ga2O3

• DOI: 10.1063/1.4968550
• Publication Date: 2016-11-21T18:00:43Z
• Authors: Nan Ma; Nicholas Tanen; Amit Verma; Zhi Guo; Tengfei Luo; Huili (Grace) Xing; Debdeep Jena
• Keywords: Electron Mobility; Limiting; Electron scattering; BETA (programming language)

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities 1018 cm-3. In spite of similar effective mass GaN, is 10x because a massive Frohlich interaction, due low energies stemming from crystal structure strong bond ionicity. Based on analysis, provide an empirical expression that should help calibrate its potential high performance device design applications.