On reduction of current leakage in GaN by carbon-doping

• DOI: 10.1063/1.4968823
• Publication Date: 2016-11-22T18:00:50Z
• Authors: Aqdas Fariza; Andreas Lesnik; Jürgen Bläsing; Marc P. Hoffmann; Florian Hörich; Peter Veit; Hartmut Witte; Armin Dadgar; André Strittmatter
• Keywords: Leakage (economics); Wide-bandgap semiconductor

Carbon-doping is proposed to reduce the dislocation-mediated leakage currents in GaN buffer layers. GaN:C grown by metalorganic vapor phase epitaxy using propane shows excellent quality up [C] = 6.7 × 1018 cm−3. Locally probing dislocations surface scanning potential microscopy reveal a transition from mostly neutral or weakly charged regions dominantly negatively relative surrounding area at high doping levels. A relation between and dislocation charge state exists. Minimum current achieved if dominant of becomes negative against surrounding.