A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

• DOI: 10.1063/1.4984145
• Publication Date: 2017-06-05T14:03:37Z
• Authors: A. Horri; R. Faez; M. Pourfath; G. Darvish
• Keywords: Thermionic emission

In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based vertical graphene-WS2 heterostructure and graphene nanoribbon (GNR)-WS2 (VTGNRFET). Our model uses nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting bandstructure to principles results. We show that, due advantage switching between thermionic transport regimes, improvement can be achieved in device. find that increase number WS2 layers enhances on/off conductance ratio but degrades intrinsic gate-delay time. results indicate VTGNRFET increases decreasing GNR width.