Flexible high energy density capacitors using La-doped PbZrO3 anti-ferroelectric thin films

• DOI: 10.1063/1.5018003
• Publication Date: 2018-02-27T18:38:59Z
• Authors: Hye Ji Lee; Sung Sik Won; Kyung Ho Cho; Chung Kyu Han; Nicholas Mostovych; Angus I. Kingon; Seung-Hyun Kim; Hee Young Lee
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Flexible high energy density capacitors were fabricated by depositing 6 mol. % La-doped anti-ferroelectric PbZrO3 thin films using chemical solution deposition on ultra-thin metal foil substrates. The integration of a LaNiO3 buffer layer on the flexible austenitic metal foil substrate resulted in substantial improvements in microstructure uniformity and density of the La-doped PbZrO3 thin film capacitors. The recoverable energy density and the energy loss of the flexible thin film capacitors were 15.2 ± 0.2 J/cm3 and 4.8 ± 0.2 J/cm3 at 1 MV/cm, respectively. The La-doped PbZrO3 flexible thin film capacitors showed no noticeable degradation in ferroelectric hysteresis behavior and the energy storage density even after 1000 bending cycles.