Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode

• DOI: 10.1063/1.5026382
• Publication Date: 2018-05-17T16:24:57Z
• Authors: Wei Liu; Hongwei Guo; Wei Li; Xia Wan; Srikrishna Chanak...; Khurram Shehzad; Yang Xu
• Keywords: Photodiode; Photocurrent

In this letter, we investigated light-induced negative differential resistance (L-NDR) effects in a hybrid photodiode formed by graphene-silicon (GS) junction and neighboring graphene-oxide-Si (GOS) capacitor. We observed two distinct L-NDR originating from the gate-dependent surface recombination potential-well-induced confinement of photo-carriers GOS region. verified studying gate-controlled GS diode, which can distinguish photocurrent region with that (gate). A large peak-to-valley ratio up to 12.1 has been obtained for due recombination. Such strong effect provides an opportunity further engineer optoelectronic properties junctions along exploring its potential applications photodetectors, photo-memories, position sensitive devices.