A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement

• DOI: 10.1063/1.5035503
• Publication Date: 2018-06-19T16:01:18Z
• Authors: Yi Wei; Yiren Lin; Xichuan Yang; Xin Tan; Jia Su; Chengyuan Song; Aimin Liu
• Keywords: Passivation; Carrier lifetime; Charge carrier; Surface Photovoltage

In this work, we propose an analysis approach to determine the individual surface recombination velocities (S1 and S2) on each of unequally passivated wafer, which precludes crude assumption S1=S2 in conventional methods. Taking advantage distributed excess charge carriers relatively sensitive recombination, probe sample using quasi-steady-state illumination xenon flash lamp equipped with a short pass filter (FSP1). A set samples by SiO2 SiNx, as well bare silicon wafers, are prepared experiment. On basis fitting measured time-dependent-excess carriers, S1 S2 determined based our approach. The spatial temporal distributions carrier density presented. dependence τeff wavelength, S τbulk is also discussed detail. reliability method finally verified long (FLP2).