Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

• DOI: 10.1063/1.5041715
• Publication Date: 2018-08-21T15:55:13Z
• Authors: J. Lyu; I. Fina; R. Solanas; J. Fontcuberta; F. Sánchez
• Keywords: Orthorhombic crystal system; Pulsed Laser Deposition

Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present remnant polarization around 20 μC/cm2 without the need of wake-up process, large coercive electric field 3 MV/cm, an extremely long retention extending well beyond 10 years, endurance up to about 108 cycles. Such outstanding in nascent research HfO2-based can pave way for better understanding effects orientation, interfaces, strain, defects ferroelectricity HfO2.