Epitaxial integration and properties of SrRuO3 on silicon

• DOI: 10.1063/1.5041940
• Publication Date: 2018-08-02T13:48:21Z
• Authors: Zhe Wang; Hari P. Nair; Gabriela C. Correa; Jaewoo Jeong; Kiyoung Lee; Eun Sun Kim; Ariel Seidner H.; Chang Seung Lee; Han Jin Lim; David A. Muller; Darrell G. Schlom
• Keywords: Physics; QC1-999; 02 engineering and technology; 0210 nano-technology; TP248.13-248.65; Biotechnology

We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ300 Kρ4 K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ∼160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.