Deformation induced complete amorphization at nanoscale in a bulk silicon

• DOI: 10.1063/1.5079819
• Publication Date: 2019-02-01T13:50:32Z
• Authors: Zhenyu Zhang; Fanning Meng; Junfeng Cui; Bo Wang; Ziguang Wang; Yang Lu; Hamad ul Hassan; Dongming Guo
• Keywords: Microelectronics; Brittleness; Critical radius; Deformation mechanism

Solid state amorphization is induced by shock, irradiation and deformation, while deformation complete remains a challenge in bulk solid. Brittle-to-ductile transition (BDT) mechanism elusive at loading speeds of m/s nanoscale depth cut. Existing formula has no effects shape radius cutting edges on the critical cut BDT. In this study, new route proposed solid confirmed transmission electron microscopy (TEM). This performed novel approach ultraprecision grinding, conducted specially designed setup. The grinding carried out developed single diamond grain with edge 2.5 μm, 24 nm under speed 40 m/s. BDT takes place 419 172 for Si (100) respectively, ground grains tip radii 5 μm correspondingly. A model suggested BDT, considering edges. findings provide insights design fabrication high performance devices used flexible electronics, nanodevices, microelectronics optoelectronics.