Ion beam annealing of semiconductors

• DOI: 10.1063/1.91819
• Publication Date: 2003-02-13T20:58:23Z
• Authors: R. T. Hodgson; J. E. E. Baglin; R. Pal; J. M. Neri; D. A. Hammer
• Keywords: 0103 physical sciences; 01 natural sciences

The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.