Dependence of trapping and segregation of indium in silicon on the velocity of the liquid-solid interface

• DOI: 10.1063/1.91856
• Publication Date: 2003-02-13T20:58:23Z
• Authors: P. Baeri; J. M. Poate; S. U. Campisano; G. Foti; E. Rimini; A. G. Cullis
• Keywords: Supercooling; Recrystallization (geology)

The segregation phenomena of In-implanted Si have been observed following the melting and epitaxial regrowth surface layers by pulsed ruby laser irradiation. velocity liquid-solid interface on recrystallization has varied from 1.8 to 5.2 m/s in two independent ways. Indium is be trapped substitutional sites, excess solid solubilities, or segregated a thin layer. Trapping increases decreases as interfacial raised. complete depth profiles can fitted with unique coefficients which are dependent. material that shows cell structure approximately 100 Å diameter arising lateral due constitutional supercooling. cells not present at velocities 5 m/s. critical dependence In trapping range 2–5 interpreted terms residence times.