Reproducible technique for fabrication of thin films of high transition temperature superconductors

Photoresist Resistive touchscreen Transition temperature
DOI: 10.1063/1.98513 Publication Date: 2002-07-26T13:03:23Z
ABSTRACT
We report on a new process to make films of Y1Ba2Cu3O7 using coevaporation Y, Cu, and BaF2 SrTiO3 substrates. The have high transition temperatures (up 91 K for full resistive transition), critical current densities (106 A/cm2 at 81 K), reduced sensitivity fabrication environmental conditions. Because the lower reactivity films, we been able pattern them in both pre-annealed post-annealed states conventional positive photoresist technology.
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