Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

• DOI: 10.1063/5.0106321
• Publication Date: 2022-11-15T10:53:01Z
• Authors: Maciej Matys; Kazuki Kitagawa; Tetsuo Narita; Tsutomu Uesugi; Jun Suda; Tetsu Kachi
• Keywords: Reverse leakage current; Saturation current; p–n junction; Equivalent series resistance; Leakage (economics)

Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation subsequent ultra-high-pressure annealing. Mg-ion was performed into a 10 μm thick Si-doped drift layer grown on free-standing n-type substrate. We fabricated the JBS different channel widths Ln = 1 1.5 μm. The diodes, depending Ln, exhibited on-resistance (RON) between 0.57 0.67 mΩ cm2, which is record low value for vertical (SBDs) high (BV) 660 675 V (84.4% of ideal parallel plane BV). obtained RON can be well explained in terms model, includes resistance, spreading current effect, substrate resistance. reverse leakage relatively 103–104 times lower than SBDs. In addition, diode significantly smaller (up to bias 300 V) large reduced electric field near interface. Furthermore, showed very density 5.5 kA/cm2, turn-on voltage 0.74 V, no destruction against rapid increase approximately by two orders magnitude. This work demonstrated that strong candidates loss power switching applications.