Implementation of habituation on single ferroelectric memristor

• DOI: 10.1063/5.0141710
• Publication Date: 2023-05-04T11:05:36Z
• Authors: Xinyu Li; Guangyuan Li; Zhihang Zhang; Wenjing Zhai; Wenhao Zheng; Liufang Chen; Lin Lin; Xiaohui Zhou; Zhibo Yan; J.-M. Liu
• Keywords: Neuromorphic engineering; Stimulus (psychology); Memristor; Facilitation

As a basic form of behavioral plasticity, habituation enables organisms to adjust their behaviors in response external stimulation and is fundamental ability organisms. The emulation hardware becomes critical highly efficient artificial neuromorphic computing. However, few devices can mimic because it includes two opposite responses the same repeated stimulus. Herein, we fabricate device Au/LiTaO3/Pt, which not only shows synaptic such as long-term potentiation/depression paired-pulse facilitation, but also demonstrates behavior. In addition, characteristics, dependent on intensity frequency stimulus, are realized device. analysis electrical transport behavior indicates that variation resistance states correlates with injection/extraction free carriers during switching suggests originates from evolution conductive domain walls LiTaO3 ferroelectric.