7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

• DOI: 10.1063/5.0164119
• Publication Date: 2023-10-03T11:33:41Z
• Authors: Yibo Xu; Vijay Gopal Thiru...; Vishank Talesara; Junao Cheng; Yuxuan Zhang; Tadao Hashimoto; Edward Letts; Daryl Key; Hongping Zhao; Wu Lu
• Keywords: Wide-bandgap semiconductor; Figure of Merit

Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the breakdown field and electron mobility. In this work, we present a vertical GaN-on-GaN PN diode using dielectric constant material, BaTiO3, electrical management voltages, in together with an optimized guard-ring plate design. Numerical simulation shows that high-k dielectrics implemented, peak at interface is mitigated from 3.5 3.1 MV/cm under reverse bias of −9.05 kV. The device design BaTiO3 voltage 9.65 kV or about 600 V improvement. fabricated diodes 57 μm thick drift layer demonstrate 7.86 bulk GaN substrate. has on-resistance 2.8 mΩ cm2 Baliga figure merit 22 GW/cm2.