Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

• DOI: 10.1063/5.0190143
• Publication Date: 2024-02-11T13:49:08Z
• Authors: Ankur Garg; Mohammad Ehtesham...; Somit Sharma; Avirup Dasgupta
• Keywords: Contact resistance; Hamiltonian (control theory)

Negative differential resistance (NDR) is observed in various emerging electronic devices. As compared to the conventional silicon-based field effect transistor (FET), NDR widely investigated two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. In this work, we study for TMD-based metal-edge-contact MoS2 double-gate FET with 10 nm channel length. The multiscale atomistic simulation demonstrated lateral heterostructure of a metal–semiconductor–metal by density functional theory, maximally localized Wannier function tight-binding Hamiltonian, and non-equilibrium Green’s methods. quantum transport model given resulted FET. Here, focus on systematic transmission spectrum finally compare it zero ideal highly doped peak-to-valley ratio response can be modulated change gate-to-source voltage used explore future applications.