A synaptic transistor based on van der Waals heterojunction HfS2/HfOx/SnS2 with optical modulation properties

• DOI: 10.1063/5.0191339
• Publication Date: 2024-04-24T12:57:31Z
• Authors: Peijing Fang; Wenxin He; Yu Lin; Wenxing Lv; Zhipeng Yu; Like Zhang; Zishuo Han; Rongbin Zhan; Zhongming Zeng
• Keywords: Neuromorphic engineering

Neuromorphic devices, which break the traditional von Neumann architecture, have attracted much attention for their ability to mimic perception, learning, and memory functions of human brain. Two-dimensional (2D) materials are excellent candidates building neuromorphic devices due atomic-level thickness optoelectronic properties. In this work, we designed a nonvolatile floating-gate synaptic device based on an HfS2/HfOx/SnS2 van der Waals heterostructure. This exhibits large window 60 V, properties, such as excitatory postsynaptic current, short-term long-term plasticity, were simulated. addition, potentiation/depression (LTP/D) characteristics can be optically modulated. The has low nonlinearity 0.22 LTP, ratio number effective conductance states was 93.3% under 532 nm illumination; is improvement levels reported using 2D-material in recent years. work offers possibility future applications devices.