Magnetic proximity effect on the spin-valley coupling in two-dimensional Cr2Ge2Te6/2H-TMD van der Waals heterostructures

• DOI: 10.1063/5.0205298
• Publication Date: 2024-04-15T11:15:37Z
• Authors: Yanzhe Zhao; He Huang; Zeyu Zhang; Liming Wang; Yanfei Wu; Chuang Liu; Jingyan Zhang; Xinqi Zheng; Shiming Zhou; Shouguo Wang
• Keywords: Valleytronics

Two-dimensional (2D) transition metal dichalcogenides with 2H-phases, as a unique platform of valleytronics, display valley polarization and the well-known anomalous Hall effect when stacking 2D magnetic substrates. In this study, we employ first-principles calculations to investigate states, band structures, proximity-dependent properties van der Waals heterostructures Cr2Ge2Te6/2H-MX2 (M = Mo, W, X S, Se, Te). Our findings reveal that possess stacking-dependent spontaneous well pristine perpendicular anisotropy. Additionally, Berry curvature circular demonstrate presence spin–momentum coupling characteristics, while calculated non-zero voltage indicates can be achieved in valley-polarized systems. Furthermore, due strain electronic at interface, undergo from semiconductors semimetals upon substitution early chalcogen elements. These provide valuable insights for practical applications valleytronics heterostructure