Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN

• DOI: 10.1063/5.0211529
• Publication Date: 2024-07-22T10:09:52Z
• Authors: K. Loeto; S. M. Fairclough; I. Griffiths; G. Kusch; S. Ghosh; M. J. Kappers; N. Young; R. A. Oliver
• Keywords: Cathodoluminescence; Wurtzite crystal structure; Wide-bandgap semiconductor; Zinc compounds

III-nitride materials, such as GaN and its alloys, are essential for modern microelectronics optoelectronics due to their unique properties. Focused ion beam (FIB) techniques play a crucial role in prototyping characterization at the micro- nanoscale. However, conventional FIB milling with Ga ions presents challenges, including surface amorphization point defect introduction, prompting exploration of alternative sources. Xenon-based inductively coupled plasma or has emerged promising alternative, offering reduced damage better sample property preservation. Despite extensive research on FIB-induced GaN, systematic comparisons between Xe luminescence characteristics remain limited. This study aims fill this gap by evaluating comparing extent caused wurtzite zincblende through cathodoluminescence measurements. Our findings indicate that yields higher integrated intensities compared milling, attributed shallower implantation depths lattice disorder. We also observe decrease intensity increasing acceleration voltage both layers. provides valuable insights into optimizing FIB-based preparation implications enhancing device performance reliability.