InN/InAlN heterostructures for new generation of fast electronics

• DOI: 10.1063/5.0215108
• Publication Date: 2024-06-25T15:02:18Z
• Authors: J. Kuzmik; R. Stoklas; S. Hasenöhrl; E. Dobročka; M. Kučera; P. Eliáš; F. Gucmann; D. Gregušová; Š. Haščík; A. Kaleta; M. P. Chauvat; S. Kret; P. Ruterana
• Keywords: Electron Mobility

N-polar InN/In0.61Al0.39N heterostructures are grown directly on sapphire by using metalorganic chemical vapor deposition. The thickness of Mg-doped In0.61Al0.39N is 340 nm, and the root-mean-square surface roughness 20 nm thick InN ∼3.2 nm. An optional AlN spike at 710 °C for 35 s used either as an interlayer to separate InAlN buffer from channel or a part nucleation after nitridation. High-resolution transmission electron microscopy reveals approximately two monolayers if interlayer. In this case, concentration screw edge threading dislocations in partially strained decreased down 6.5 × 109 38 cm−2, respectively. More importantly, inclusion suppressed remote donor alloy disorder scatterings, providing, room temperature, free mobility 620 cm2/V 3 1013 On other hand, omitting led structural deteriorations while resistivity increased 1.7 kΩ/□. A current density ∼12–16 A/mm, breakdown field ∼75 kV/cm, drift velocity ∼2 107 cm/s were determined applying 10 ns voltage pulses fabricated test resistors.