Temperature-dependent dielectric behavior of A6B2O17 (A = Zr, Hf; B = Nb, Ta) phases

• DOI: 10.1063/5.0219964
• Publication Date: 2024-08-26T10:50:24Z
• Authors: R. Jackson Spurling; Michael T. Marako...; Arafat Hossain; Saeed S. I. Almishal; Steven E. Perini; Michael T. Lanagan; Jon-Paul Maria
• Keywords: 0103 physical sciences; 01 natural sciences

We report on temperature-dependent dielectric behavior of disordered ternary A6B2O17 (A = Zr, Hf; B Nb, Ta)-form oxides in the GHz frequency range. The microwave properties including relative permittivity, loss, and permittivity were characterized using cylindrical resonators a resonant post measurement technique. Dielectric measurements through method approach generally agree with bulk ceramics measured standard techniques. Coefficients describing for phases are strongly positive, suggesting contributions to polarizability arising from long-range mechanisms potentially associated structural disorder. These observations support working hypothesis that material functionality can be engineered by chemical diversity disorder possible high configurational entropy phases.