Comparative performance of fluorite-structured materials for nanosupercapacitor applications

• DOI: 10.1063/5.0220110
• Publication Date: 2024-07-24T17:40:04Z
• Authors: Grégoire Magagnin; Jordan Bouaziz; Martine Le Berre; Sara Gonzalez; Damien Deleruyelle; Bertrand Vilquin
• Keywords: Fluorite; Hysteresis; Antiferroelectricity

Over the last fifteen years, ferroelectric (FE) and antiferroelectric (AFE) ultra-thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. AFE ZrO2, in particular, holds promise nanosupercapacitors, owing to its potential energy storage density (ESD) efficiency (η). This work assesses high-performance Hf1−xZrxO2 thin encapsulated by TiN electrodes that show linear dielectric (LD), FE, behavior. A wake-up effect is observed phenomenon barely reported pure zirconium oxide general, correlated with disappearance pinched hysteresis loop commonly Zr-doped HfO2 films. ESD η are compared AFE, LD samples at same electrical field (3.5 MV/cm). As expected, higher FE sample (95 J/cm3), but ridiculously small (≈55%) because opening curve, inducing loss. Conversely, exhibit highest (nearly 100%), expense lower ESD. ZrO2 film strikes balance between behavior, showing reduced losses an as 52 J/cm3 3.5 MV/cm. value can be further increased up 84 (4.0 MV/cm), 75%, among values materials, offering promising perspectives future optimization.