Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

• DOI: 10.1063/5.0224068
• Publication Date: 2025-03-04T12:58:41Z
• Authors: Takahiro Nagata; Asahiko Matsuda; Takashi Teramoto; Dominic Gerlach; Peng Shen; Shigenori Ueda; Takako Kimura; Christian Dussarrat; Toyohiro Chikyow
• Keywords: Wide-bandgap semiconductor; Interface (matter)

The effects of nitrosyl fluoride (FNO) gas treatment on the surface GaN(0001) and its interface with sputtered Pt were investigated by hard x-ray photoelectron spectroscopy (HAXPES). Annealing GaN Pt/GaN samples in an FNO atmosphere resulted appearance prominent F 1s peaks HAXPES spectra, indicating efficient formation Ga–Fx bonding states not only bare-GaN but also Pt/GaN, even when was performed after deposition. In addition, chemical shifts Ga 2p3/2 N corresponded to a Fermi level shift toward valence band. induced greater oxidation than interface. By contrast, at interface, unintentionally formed oxide GaOx reduced, resulting improvement electrical properties. results this study suggest that is effective post-processing method for fluorination GaN-based systems metal