200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers

• DOI: 10.1063/5.0230413
• Publication Date: 2024-10-30T13:38:13Z
• Authors: Carl Peterson; Arkka Bhattacharyya; Kittamet Chanchai...; Rachel Kahler; Saurav Roy; Yizheng Liu; Steve Rebollo; Anna Kallistova; Thomas E. Mates; Sriram Krishnamoo...
• Keywords: Electron Mobility

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall mobilities up to 200 cm2/Vs, reaching predicted theoretical maximum phonon scattering-limited mobility value for β-Ga2O3. Growth homoepitaxial was performed Fe-doped (010) substrates at a rate 1.9 μm/h using TEGa as Gallium precursor. To probe background concentration, an unintentionally doped film grown concentration 3.43 × 196 cm2/Vs. intentionally accomplished by fixing all conditions varying only silane flow, controllable ranging from 4.38 8.30 exceptional 194 cm2/Vs demonstrated. C-V measurements showed flat charge profile ND+–NA− values correlating well Hall-measured films. SIMS silicon atomic matched carbon hydrogen below detection limit The Hall, C-V, data indicate high-quality doping into mid range. These results demonstrate MOCVD electronics grade mobility, low carrier density, drift layers next-generation vertical power devices.