Capacitance characterization and current transport mechanism of ZnSnN2 heterojunctions

• DOI: 10.1063/5.0241401
• Publication Date: 2024-12-10T12:19:38Z
• Authors: Fan Ye; Zi-Cheng Zhao; Cang-Shuang He; Jian-Lin Liang; Qian Gao; Yi-Zhu Xie; Dong-Ping Zhang; Xing-Min Cai
• Keywords: Thermionic emission; Band diagram; Depletion region; Biasing

The trap and defect energy levels of ZnSnN2 the current transport mechanism its heterojunctions are studied. A shallow level at 105 meV below conduction band minimum (Ec) is detected possible origin intrinsic antisite SnZn (Sn occupy position Zn in ZnSnN2), besides traps located 0.67, 1.03 1.06 to 1.21 eV Ec. interface states form two discrete with one Ec + 0.05 another Ec−0.03 eV. controlled by thermionic emission relatively low bias voltage limited space charge higher voltage. barrier height inhomogeneous, which obeys Gaussian distribution possibly results from roughness.