Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

• DOI: 10.1063/5.0244331
• Publication Date: 2025-03-18T14:51:46Z
• Authors: J. Brubach; T.-Y. Huang; T. Borrely; C. Greenhill; J. Walrath; G. Fedele; Y.-C. Yang; A. Zimmerman; R. S. Goldman
• Keywords: Free carrier

Semiconductor quantum dots (QDs) are nanostructures that can enhance the performance of electronic devices due to their 3D quantization. Typically, heterovalent impurities, or dopants, added semiconducting QDs provide extra electrons and improve conductivity. Since each QD is expected contain a few parent dopants have been difficult locate. In this work, we investigate spatial distribution donors in epitaxial InAs/GaAs using local-electrode atom-probe tomography self-consistent Schrödinger–Poisson simulations effective mass approximation. Although provided both layers, ionized primarily reside outside QDs, providing contained within QDs. Indeed, confinement-induced enhancement donor ionization energy lower fraction ionized. These findings suggest pathway toward development modulation-doped nanostructures.