Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

• DOI: 10.1073/pnas.1419771112
• Publication Date: 2015-04-21T02:51:43Z
• Authors: Steve Park; Gaurav Giri; Leo Shaw; Gregory Pitner; Jewook Ha; Ja Hoon Koo; Xiaodan Gu; Joonsuk Park; Tae Hoon Lee; Ji Hyun Nam; Yongtaek Hong; Zhenan Bao
• Keywords: 02 engineering and technology; 0210 nano-technology

Significance Solution-processed organic electronics are expected to pave the way for low-cost large-area electronics with new and exciting applications. However, realizing solution-processed organic electronics requires densely packed transistors with patterned and precisely registered organic semiconductors (OSCs) within the transistor channel with uniform electrical properties over a large area, a task that remains a significant challenge. To address such a challenge, we have developed an innovative technique that generates self-patterned and self-registered OSC film with low variability in electrical properties over a large area. We have fabricated highest density of transistors with a yield of 99%, along with various logic circuits. This work significantly advances organic electronics field to enable large-scale circuit fabrication in a facile and economical manner.