Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure

• DOI: 10.1088/1361-6528/aabcf6
• Publication Date: 2018-04-10T11:45:51Z
• Authors: Hyung Jun Kim; Daehoon Park; Paul Yang; Keonwon Beom; Min Ju Kim; Chansun Shin; Chi Jung Kang; Tae-Sik Yoon
• Keywords: Memristor; Neural facilitation

A crossbar array of Pt/CeO2/Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio ∼103, corresponding to wide dynamic range weight modulation potentiation depression respect voltage polarity. In addition, it presented timing-dependent responses paired-pulse facilitation short-term long-term memory transition by increasing amplitude, width, repetition number pulse reducing interval time between pulses. The loss was fitted stretched exponential relaxation model, revealing relation stability input stimuli strength. further enhanced but its got worse measurement temperature, indicating that changed result voltage- temperature-dependent electrical charging discharging alter energy barrier for charge transport. These detailed demonstrated potential artificial synapses in highly connected neuron-synapse network.