The impact of interface electric field on the photoreflectance of semiconductor multilayers revisited with the heterostructures of InGaAs/InP

• DOI: 10.1088/1361-6641/adc7d2
• Publication Date: 2025-04-01T22:50:16Z
• Authors: Jia Zhan; Fang-xing Zha; Yi Gu; Ping-ping Chen
• Keywords: Interface (matter)

Abstract In the photoreflectance of semiconductor heterostructure layers, modulated signals may arise from modulations both surface and interface electric potentials. It is necessary to distinguish effectively different origins in favor unraveling interfacial electronic properties. However, knowledge aspect remains a challenge for PR technique work revisits topic through experiments on lattice-matched single (SH) InGaAs/InP double (DH) InP/InGaAs/InP, which were grown by molecular beam epitaxy. We examined modulation effect with two laser wavelengths, 532 nm 1064 nm, only generates field DH sample. The confined energy levels dimensional electron gas at are disclosed under either laser. beneficial probe structure deeply buried avoiding inhibition absorption InP layer top. Furthermore, result sample demonstrates other virtue that it allows wide band gap despite has smaller than demanded excite band-to-band transition bandgap.