Anisotropic Optical Properties of Metastable (011¯2)α−Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy

• DOI: 10.1103/physrevapplied.10.024047
• Publication Date: 2018-08-29T13:00:48Z
• Authors: M. Kracht; A. Karg; M. Feneberg; J. Bläsing; J. Schörmann; R. Goldhahn; M. Eickhoff
• Keywords: Metastability; Crystal (programming language)

Despite the fact that metastable $\ensuremath{\alpha}$-Ga${}_{2}$O${}_{3}$ becomes increasingly interesting for applications in $e.g.$ high-power electronics, its basic material properties remain unclear. The authors employ plasma-assisted molecular-beam epitaxy to grow $r$-plane-oriented thin films of this birefringent semiconductor, as crystal orientation allows measurement anisotropic optical properties. firm knowledge these device design proceed, including band-gap engineering by alloying with $\ensuremath{\alpha}$-In${}_{2}$O${}_{3}$ and $\ensuremath{\alpha}$-Al${}_{2}$O${}_{3}$.