Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

• DOI: 10.1103/physrevapplied.14.024093
• Publication Date: 2020-08-31T18:44:32Z
• Authors: O. Syshchyk; B. Hsu; H. Yu; V. Motsnyi; A. Vais; B. Kunert; Y. Mols; R. Alcotte; R. Puybaret; N. Waldron; P. Soussan; P. Boulenc; G. Karve; E. Simoen; N. Collaert; B. Puers; C. Van Hoof
• Keywords: 02 engineering and technology; 0210 nano-technology

Monolithically integrated $\mathrm{Ga}\mathrm{As}$ $p$-$i$-$n$ diodes are demonstrated on 300-mm $\mathrm{Si}$ $(001)$ substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar diodes. The point defect, EL2 with ${N}_{T}\ensuremath{\simeq}3\ifmmode\times\else\texttimes\fi{}{10}^{14}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$, observed A methodology developed extract the surface-state density (${N}_{\mathrm{SS}}$) directly from DLTS spectrum. show ${N}_{\mathrm{SS}}\ensuremath{\simeq}2\ifmmode\times\else\texttimes\fi{}{10}^{13}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ compared diode approximately $6.5\ifmmode\times\else\texttimes\fi{}{10}^{12}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. clear correlation between dark current density. An investigation impact of an in situ ex passivation layers leakage reduction performed